JFET Drain Current (Shockley)

Id = Idss · (1 − Vgs/Vp)²

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Formula

Id = Idss × (1 − Vgs/Vp)²

Description

Shockley’s equation gives the drain current of a JFET in saturation as a function of gate–source voltage. The current is maximum (Idss) at zero gate voltage and falls to zero as Vgs approaches the pinch-off (threshold) voltage. The square-law relationship gives JFETs their characteristic soft, low-distortion transfer curve used in audio and RF front ends.

Variables

  • Id — Drain current (A)
  • Idss — Drain current at Vgs = 0 (A)
  • Vgs — Gate-source voltage (V)
  • Vp — Pinch-off / cutoff voltage (V)

Practical Notes

For an n-channel JFET both Vgs and Vp are negative. The transconductance is gm = (2·Idss/|Vp|)·(1 − Vgs/Vp), largest near Vgs = 0.