Discrete Amplifiers Formulas

Discrete Amplifiers formulas cover Thermal Voltage, Small-Signal Emitter Resistance, Transistor Transconductance and more. These calculators let you solve for any unknown by entering the values you already know. Use them for quick design checks, study, and verifying real circuits.

Discrete Amplifiers Formula Calculators

Worked result for every Discrete Amplifiers formula

Formula Expression Worked result
Thermal Voltage VT = k · T / q Temperature 7.7 K → Thermal Voltage = 0.6635 mV
Small-Signal Emitter Resistance re = VT / Ie Thermal Voltage 10 mV, Emitter Current 100 µA → Emitter Resistance = 100 Ω
Transistor Transconductance gm = Ic / VT Collector Current 100 µA, Thermal Voltage 10 mV → Transconductance = 10 mS
Diode Dynamic Resistance rd = VT / Id Thermal Voltage 10 mV, Diode Current 100 µA → Dynamic Resistance = 100 Ω
Common-Emitter Voltage Gain Av = −Rc / re Collector Resistor 100 Ω, Emitter Resistance 1 Ω → Voltage Gain = -100
BJT Alpha–Beta Relationship α = β/(β+1), β = α/(1−α) Common-Emitter Gain β 0.055 → Common-Base Gain α = 0.05213
Darlington Pair Current Gain βtotal = β1 · β2 Gain β1 0.055, Gain β2 0.118 → Total Gain = 0.00649
Emitter-Follower Input Impedance Zin ≈ β · RE Current Gain β 0.025, Emitter Resistor 0.22 kΩ → Input Impedance = 5.5 Ω
Cascaded Amplifier Gain Av = Av1 · Av2 · Av3 Stage 1 Gain 0.055, Stage 2 Gain 0.118, Stage 3 Gain 0.0118 → Total Gain = 7.66 × 10⁻⁵
JFET Drain Current (Shockley) Id = Idss · (1 − Vgs/Vp)² Idss 0.22 mA, Gate-Source Voltage 0.33 V, Pinch-off Voltage 0.726 V → Drain Current = 65.45 µA
MOSFET Drain Current (Saturation) Id = K · (Vgs − Vth)² Conduction Parameter 100 µA/V², Gate-Source Voltage 0.33 V, Threshold Voltage 0.726 V → Drain Current = 15.68 µA
Transistor Switch Base Resistor Rb = (Vin − Vbe) · β / Ic Drive Voltage 0.33 V, Base-Emitter Voltage 0.726 V, Current Gain β 0.025, Collector Current 100 µA → Base Resistor = -99 Ω
Amplifier Power Gain Ap = Av · Ai Voltage Gain 0.055, Current Gain 0.118 → Power Gain = 0.00649
BJT Emitter-Bias Current Ic ≈ (Vb − Vbe) / Re Base Voltage 0.33 V, Base-Emitter Voltage 0.726 V, Emitter Resistor 100 Ω → Collector Current = -3.96 mA
Common-Source JFET Gain Av = −gm · Rd Transconductance 100 µS, Drain Resistor 100 Ω → Voltage Gain = -0.01
Common-Collector Current Gain Ai = β + 1 Current Gain β 0.055 → Current Gain = 1.055

Variables used across Discrete Amplifiers formulas

  • VT — Thermal voltage (V)
  • T — Absolute temperature (K)
  • k — Boltzmann constant 1.381×10⁻²³ J/K
  • q — Elementary charge 1.602×10⁻¹⁹ C
  • re — Small-signal emitter resistance (Ω)
  • Ie — DC emitter current (A)
  • gm — Transconductance (S = A/V)
  • Ic — Collector bias current (A)
  • rd — Small-signal dynamic resistance (Ω)
  • Id — DC bias current (A)
  • Av — Voltage gain (negative = inverting)
  • Rc — Collector load resistance (Ω)
  • α — Common-base current gain (Ic/Ie, < 1)
  • β — Common-emitter current gain (Ic/Ib)
  • βtotal — Combined current gain
  • β1 — First (driver) transistor gain
  • β2 — Second (output) transistor gain
  • Zin — Input impedance looking into the base (Ω)
  • RE — Emitter resistance / load (Ω)
  • Av(total) — Overall voltage gain
  • Av1, Av2, Av3 — Individual stage gains (set unused = 1)
  • Idss — Drain current at Vgs = 0 (A)
  • Vgs — Gate-source voltage (V)
  • Vp — Pinch-off / cutoff voltage (V)
  • K — Conduction parameter ½µCox(W/L) (A/V²)
  • Vth — Threshold voltage (V)
  • Rb — Base resistor (Ω)
  • Vin — Logic/drive high voltage (V)
  • Vbe — Base-emitter drop (~0.7 V)
  • Ap — Power gain
  • Ai — Current gain (magnitude)
  • Vb — Voltage at the base node (V)
  • Re — Emitter resistor (Ω)
  • Rd — Drain load resistance (Ω)

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