BJT Total Dissipation
P = VCE × IC + VBE × IB
Quick answer
This calculator solves P = VCE × IC + VBE × IB for P. With VCE 12 V, IC 2 A, VBE 26.4 V, IB 20 mA, the result is 24.53 W.
Calculator
Formula
Description
The total power dissipated in a bipolar junction transistor is the sum of collector-emitter power and base-emitter power. In most practical circuits, the collector-emitter term (VCE × IC) dominates because IC is much larger than IB. When the BJT is used as a switch in saturation, VCE_sat is typically 0.1-0.3V, making dissipation quite low. In the active (linear) region, VCE can be significant and the BJT acts as a variable resistor, dissipating potentially large amounts of power. The base-emitter term is usually small but should not be ignored in precision calculations.
Variables
- P — Total power dissipation (W)
- VCE — Collector-emitter voltage (V)
- IC — Collector current (A)
- VBE — Base-emitter voltage (V)
- IB — Base current (A)
Practical Notes
In saturation, VCE_sat increases with collector current and decreases with higher base overdrive. A common rule of thumb is to set IB = IC / (β × 0.5) to ensure deep saturation. Safe operating area (SOA) curves in the datasheet define the maximum allowable combinations of VCE and IC.
Symbols and units
| Symbol | Meaning | Default unit | Accepted units |
|---|---|---|---|
| Vce | VCE | V | pV, nV, µV, mV, V, kV |
| Ic | IC | A | pA, nA, µA, mA, A, kA |
| Vbe | VBE | V | pV, nV, µV, mV, V, kV |
| Ib | IB | mA | pA, nA, µA, mA, A, kA |
Step by step
- 1. What you know: VCE 12 V, IC 2 A, VBE 26.4 V, IB 20 mA
- 2. The relation: P = VCE × IC + VBE × IB
- 3. Substitute: Vce = 12 V, Ic = 2 A, Vbe = 26.4 V, Ib = 20 mA
- 4. Result: P = 24.53 W
Related quantities from the same inputs
- P = V × I = 24 W
Worked examples
Minimum range
Given: VCE 0.33 V, IC 2 mA, VBE 0.726 V, IB 100 µA
Result: P = 7.33 × 10⁻⁴ W
Low range
Given: VCE 3.3 V, IC 20 mA, VBE 7.26 V, IB 1 mA
Result: P = 0.07326 W
Typical
Given: VCE 12 V, IC 2 A, VBE 26.4 V, IB 20 mA
Result: P = 24.53 W
High range
Given: VCE 0.23 kV, IC 100 A, VBE 0.506 kV, IB 0.5 A
Result: P = 23250 W
Maximum range
Given: VCE 2.3 kV, IC 1 kA, VBE 5.06 kV, IB 5 A
Result: P = 2.33 × 10⁶ W
How P changes with VCE
| VCE (input) | P (result) |
|---|---|
| 1.2 V | 2.928 W |
| 3 V | 6.528 W |
| 6 V | 12.53 W |
| 9 V | 18.53 W |
| 12 V | 24.53 W |
| 18 V | 36.53 W |
| 24 V | 48.53 W |
| 48 V | 96.53 W |
| 84 V | 168.5 W |
| 120 V | 240.5 W |
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<p><a href="https://vbatpower.com/formulas/bjt-power/">BJT Total Dissipation</a> Calculator by vbatpower.com</p> Frequently asked questions
How do you calculate BJT Total Dissipation?
Use P = VCE × IC + VBE × IB. With VCE 12 V, IC 2 A, VBE 26.4 V, IB 20 mA, P works out to 24.53 W.
What is the formula for BJT Total Dissipation?
The formula is P = VCE × IC + VBE × IB. The total power dissipated in a bipolar junction transistor is the sum of collector-emitter power and base-emitter power.
Related Concepts
All Semiconductors formulas →Need more features?
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